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| Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 120N25 VDSS ID25 RDS(on) = 250 V = 120 A = 22 m Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient TC = 25C MOSFET chip capability External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum ratings 250 250 20 30 120 75 480 90 64 3.0 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C Nm/lb.in. g G D S TO-264 AA (IXTK) D (TAB) G = Gate S = Source D = Drain Tab = Drain Features 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 300 0.7/6 10 * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * International standard package * Fast switching times Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 1 mA V DS = VGS, ID = 250 A V GS = 20 V DC, VDS = 0 V DS = VDSS V GS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 250 2.0 4.0 200 V V nA * * * Motor controls DC choppers Switched-mode power supplies Advantages * * * 50 A 3 mA 22 m Easy to mount with one screw (isolated mounting screw hole) Space savings High power density V GS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2% (c) 2002 IXYS All rights reserved 98879A (02/02) IXTK 120N25 Symbol Test Conditions (T J = 25C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK 0.15 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External) VGS = 0 V, VDS = 25 V, f = 1 MHz V DS = 10 V; ID = 0.5 ID25, pulse test Characteristic values Min. Typ. Max. 65 85 9400 1730 550 35 38 175 35 400 70 155 S pF pF pF ns ns ns ns nC nC nC 0.22 K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. TO-264 AA Outline .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode Symbol IS ISM VSD t rr Qrr Test Conditions VGS = 0V Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. 120 480 1.5 A A V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 30A, -di/dt = 100 A/s, VR = 100V 350 6 ns C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
Price & Availability of IXTK120N25
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